PROPERTIES OF PROMISING PROSPECTIVE COMPOSITES FOR OPTOELECTRONIC
Keywords:
semiconductor, germanium, silicon, multicomponent compounds, band gap widthAbstract
The purpose of the work is to analyze the properties of promising composites with a layered structure for optoelectronic technology. Determine the features of parameter changes when changing components. The width of the forbidden band is estimated. The dependence of the band gap change on temperature and the component content of the studied compounds was established. Based on the analysis of the frequency dependence of the absorption coefficient and photoconductivity, a model of optical transitions is proposed, which explains the connection of the home maxima of the photoconductivity spectra with the corresponding structural defects. The dependence of the width of the energy gaps for the direct (H) and indirect (Z) minima of the conduction band on the content of SiSe2, GeSe2 was analyzed. The energy band structure of Tl1-xIn1-x(Si, Ge)xSe2 was schematically plotted. Therefore, semiconductor crystals of TlInSe2–DIVSe2 (DIV–Si, Ge) solid solutions, whose band gap at room temperature is 1.12–1.69 eV, are promising as functional materials of modern optoelectronic technology, for use in photonics and photovoltaics. The change in physical properties from the molar content of components x, associated with the rearrangement of the band structure, significantly expands the functionality of crystalline compounds TlInSe2–DIVSe2 (DIV – Si, Ge). In the article, the basic photonic parameters of TlInSe2–DIVSe2 solid solution crystals from the molar content of SiSe2, GeSe2, as functional materials for optoelectronic devices, were established at a temperature of Т = 300 K. Therefore, having well-established technologies for obtaining crystalline compounds, it is possible to obtain multifunctional materials for optoelectronic devices. By changing the molar content of components x, it is possible to predictably change the mechanisms of interband transitions of semiconductors, which expands the practical use of the material for light or photo devices.
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