OPTICAL AND NON-LINEAR OPTICAL PROPERTIES OF Er-DOPED AgGaGeS4 CRYSTALLITES
DOI:
https://doi.org/10.32782/pet-2022-1-5Keywords:
semiconductors, optical absorption, photoinduced effects, electron-phonon interactionAbstract
The paper analyzes the effect of band gap width and average grain size on the intensity of second harmonic generation of AgGaGeS4 and Er-doped AgGaGeS4 crystals. To estimate the band gap, a study of the spectral distribution of the absorption coefficient in the region of the fundamental absorption edge was carried out. The estimated band gap at 350 cm-1 at T=300 K is 2.83 and 2.91 eV for AgGaGeS4 and AgGaGeS4:Er, respectively. It was established that the introduction of a rare earth element (Er) to AgGaGeS4 contributes to an increase in the band gap of the studied compound. Due to the non-centrosymmetric nature of the crystal structure, AgGaGeS4 crystals doped with rare earth metals are of interest due to their potential use in electro-optical and nonlinear optical devices. With this in mind, we conducted a study of the generation of the second harmonic. It was established that the intensity of second harmonic generation in doped crystals is lower compared to that in undoped samples. It is important that when the grain size increases, the SGH intensity increases in both AgGaGeS4 and AgGaGe3Se8:Er crystals The obtained result indicates that multicomponent chalcogenides, namely AgGaGeS4 and AgGaGeS4:Er, are promising nonlinear optical materials, as they have a higher laser damage threshold and a nonlinear optical response comparable to commercially used AgGaS2.
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