SOME FEATURES OF MODELLING DIFFUSIVE PROCESSES OF RELAXED OPTICS
DOI:
https://doi.org/10.32782/pet-2025-2-12Keywords:
diffusion, modelling, Relaxed Optics, indium antimonide, indium arsenide, cadmium tellyrideAbstract
Some problems of modelling the diffusive processes in Relaxed Optics are discussed. Diffusion processes in Relaxed Optics can occur at different stages. We will focus on processes that are caused by the absorption of optical radiation with an intensity slightly greater than the value required for the generation of maximum photokinetic defect in the nearsurface region of the irradiated material, and less than the intensity required for the destruction of the irradiated material. The simulation was performed for antiomnide and indium arsenide irradiated with 20 nanosecond pulses of a ruby laser. The model was based on a photoionization model: the generation of donor centers occurs due to the direct photoionization of two of the three chemical bonds of the two-dimensional sphalerite lattice. The rupture of the third bond leads to the generation of diffusion processes. Two diffusion models are presented. The one-diffusion model is based on the behavior and evolution of laser-induced donor centers as separate objects. The disadvantage of this model is that it cannot explain the tails of the donor center distribution profiles in the diffusion approximation. In this regard, a two-diffusion model was proposed, which is based on the idea of non-uniform photostimulated diffusion of atoms of the components of the irradiated material: indium and antimony for indium antimonide and indium and arsenic for indium arsenide. This is confirmed by experimental results for laser-irradiated cadmium telluride. The two-diffusion model allows us to explain the diffusion profiles of the distribution of donor centers in indium antimonide and indium arsenide in a consistent manner. Based on this model, it is concluded that such modeling methods can be extended to all binary compounds and it is worth expanding these methods to more complex materials (ternary, quaternary, etc.).
References
Bahir G., Bernstein T. cw CO2 and ruby laser annealing of ion-implanted HgxCd1 - xTe. Applied Physics Letters, v.39, No.9, 1981. P.730–732.
Belova I. V., Ahmed T., Sarder U., Evteev A. V., Levchenko E. V., Murch G. E. The Manning factor for direct exchange and ring diffusion mechanisms. Philosophical Magazine, vol. 97, is. 4, 2017. P. 230–247.
Boltaks B. I. Diffusion in Semiconductors. London, Melbourne: Hassell Street Press, 2021. 400 р.
Ganguly J. Diffusion kinetics in minerals: Principles and applications to tectono-metamorphic processes. EMU Notes in Mineralogy, Vol. 4, Chapter 10, 2002. P. 271–309.
Heitjans P., Kärger J., eds. Diffusion in condensed matter: Methods, Materials, Models (2nd ed.). Berlin – Heidelberg, 2005. 965 p.
Manning J. Diffusion Kinetics for Atoms in Crystals. Princeton: Van Nostrand, 1968. 275 p.
Prinsloo L.C., Lee M. E. Laser induced formation of a Te on CdTe. Internet Archive (University of Pretoria @ University of North, South Africa) 2003–2005. 2 p.
Shaw D., eds. Atomic diffusion in semiconductors. Ed. by New York: Plenum Press, 1973. XIII+607 p.
Trokhimchuck P. P. Relaxed optical phenomena in InSb and InAs and comparative analysis with other experimental data./Proc. SPIE/Ukraine. Current Research in Optics and Photonics. № 2, 2002. P. 110–118.
Trokhimchuck P. P. Relaxed Optics: Realities and Perspectives. Saarbrukken: Lambert Academic Publishing, 2016. 260 p.
